TITLE

Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes

AUTHOR(S)
Parihar, Usha; Padha, N.; Panchal, C. J.
PUB. DATE
June 2013
SOURCE
Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 2, p02015-1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C-2-V characteristics for the Al/p-CuInAlSe3 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed
ACCESSION #
87586181

 

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