TITLE

Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

AUTHOR(S)
Lee, Kyu-Seung; Isnaeni; Yoo, Yang-Seok; Lee, Jae-Hoon; Kim, Yong-Chun; Cho, Yong-Hoon
PUB. DATE
May 2013
SOURCE
Journal of Applied Physics;May2013, Vol. 113 Issue 17, p173512
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study investigates optical properties and carrier dynamics of InGaN-based light-emitting diodes grown on cone-shaped patterned sapphire (CSPS) and planar sapphire substrates. Edge-type threading dislocations were dramatically reduced in InGaN multiple quantum wells (MQWs) on CSPS substrates compared to the case of planar substrates. We observed a smaller Stokes shift and enhanced quantum efficiency for CSPS substrates. From time-resolved optical analysis, we found that the non-radiative (radiative) recombination rate of MQWs on CSPS is lower (higher) than that of MQWs on planar substrates, which is consistent with improved crystal quality (strain relaxation) of the MQWs on CSPS.
ACCESSION #
87497448

 

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