TITLE

RFMD Changes GaAs Strategy

PUB. DATE
April 2013
SOURCE
Microwaves & RF;Apr2013, Vol. 52 Issue 4, p22
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports that gallium-arsenide (GaAs) pseudomorphic-high-electron-mobility-transistor (pHEMT) facility of RF Micro Devices Inc. will be transitioned to the company's GaAs heterojunction-bipolar-transistor (HBT) manufacturing facility.
ACCESSION #
87423700

 

Related Articles

  • @Business.  // Inter@ctive Week;02/24/97, Vol. 4 Issue 5, p37 

    Presents information as it relates to business enterprises in the United States. Details on the stock performance of RF Micro Devices Incorporated; Amount of money Redleaf Venture I has raised in its first fund; Loss recorded by Intellicell Corporation at the end of the March 31st, 1997...

  • Chips are down. McMillan, Alex Frew // Business North Carolina;Apr98, Vol. 18 Issue 4, p26 

    Features RF Micro Devices Incorporated. Reference to the problems associated with the location at which the project was to be constructed; Length of time the project took; Comments from Jerry Neal, marketing vice president of RF Micro; Information on the financial status of the company.

  • RF Micro Devices plans to build own wafer fab. Hardie, Crista // Electronic News;9/02/96, Vol. 42 Issue 2132, p14 

    Reports on RF Micro Devices Inc.'s plans to build its first wafer fabrication facility in Greensboro, North Carolina. Plans to invest an undisclosed sum that will triple capacity from RF's current foundry supplier TRW; Heavy demand for components used in cellular communications.

  • COMPANY NEWS.  // Machine Design;3/17/2005, Vol. 77 Issue 6, p50 

    Presents updates on engineering companies as of March 2005. Grant of Q1 approval from the Ford Motor Co. to the welding-consumables manufacturing facility owned by Lincoln Electric Co.; Establishment of a customer support and design center in Toulouse, France owned by RF Micro Devices Inc.

  • RF Micro Devices opens U.K. office.  // RCR;06/05/2000, Vol. 19 Issue 23, p23 

    Announces that RF Micro Devices Inc., a provider of proprietary radio-frequency integrated circuits for wireless communications applications, has opened its first local European sales and support center in Great Britain.

  • GaN power transistor unmatched by GaAs or Si.  // Electronics Weekly;12/8/2010, Issue 2451, p10 

    The article reports that RF Micro Devices has released a 75W Gallium Nitride Renewable Energy unmatched power transistor, which is designed to deliver superior performance against other competing i transistors.

  • CDMA Front End Receiver.  // Wireless Design & Development;Dec2002, Vol. 10 Issue 12, p7 

    Introduces RF2860 broadband front end receiver for code division multiple access microcomputer applications from RF Micro Devices Inc. Features of the transreceiver; Pros and cons.

  • RFMD UNVEILS LINEAR POWER AMPLIFIER FOR WIFI/WIMAX.  // Electro Manufacturing;Jul2009, Vol. 22 Issue 7, p5 

    The article evaluates the RF5602 power amplifier from RF Micro Devices (RFMD) Inc.

  • RFMD DEBUTS RFFC0085 FREQUENCY CONVERTER IC.  // Electro Manufacturing;Dec2009, Vol. 22 Issue 12, p3 

    The article evaluates the RFFC0085 frequency converter integrated circuit (IC) from RF Micro Devices Inc.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics