RFMD Changes GaAs Strategy

April 2013
Microwaves & RF;Apr2013, Vol. 52 Issue 4, p22
Trade Publication
The article reports that gallium-arsenide (GaAs) pseudomorphic-high-electron-mobility-transistor (pHEMT) facility of RF Micro Devices Inc. will be transitioned to the company's GaAs heterojunction-bipolar-transistor (HBT) manufacturing facility.


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