Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Georgakilas, A.; Deligeorgis, G.; Aperathitis, E.; Cengher, D.; Hatzopoulos, Z.; Alexe, M.; Dragoi, V.; Gösele, U.; Kyriakis-Bitzaros, E. D.; Minoglou, K.; Halkias, G.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5099
Academic Journal
A methodology for the heterogeneous integration of epitaxial GaAs wafers with fully processed standard bipolar complementary metal-oxide-semiconductor Si wafers is presented. The complete low-temperature wafer bonding process flow, including procedures for the Si wafer planarization and GaAs substrate removal, has been developed and evaluated. The implementation of an in-plane optical link, consisting of an edge-emitting laser diode, a waveguide and a photodiode, is demonstrated.


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