Control of the morphology transition for the growth of cubic GaN/AlN nanostructures

Martinez-Guerrero, E.; Chabuel, F.; Daudin, B.; Rouvière, J. L.; Mariette, H.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5117
Academic Journal
The Stransky-Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride (GaN/AlN) system grown by molecular beam epitaxy. Besides the lattice parameter mismatch which governs this transition, we evidence the importance of two other parameters, namely the substrate temperature and the III/V flux ratio. Tuning each of these two parameters enables to control the strain relaxation mechanism of a GaN deposited onto AlN, leading to the growth of either quantum wells or quantum dots.


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