F-enhanced morphological and thermal stability of NiSi films on BF[sub 2][sup +]-implanted Si(001)

Wong, A. S. W.; Chi, D. Z.; Loomans, M.; Ma, D.; Lai, M. Y.; Tjiu, W. C.; Chua, S. J.; Lim, C. W.; Greene, J. E.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5138
Academic Journal
The morphological and thermal stability of conducting NiSi films formed on Si(001) are significantly enhanced by pre-implantation of the Si wafer with BF[sup +, sub 2]. In the absence of F, the maximum silicidation temperature T[sub max] is 650 °C; higher temperatures lead to the formation of the competing high-resistivity NiSi[sub 2] phase. T[sub max], however, is increased to ≥750 °C during NiSi formation on Si(001) implanted with 20 keV BF[sup +, sub 2] at a dose of 5 × 10[sup 15] cm[sup -2]. The observed enhancement in NiSi thermal stability is due to F segregation to the silicide/Si(001) interface and silicide grain boundaries, which retards NiSi grain growth, leading to much smoother layers, and inhibits NiSi[sub 2] nucleation.


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