Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO[sub 2]-patterned vicinal (001) GaAs substrates

Kim, Hyo Jin; Motohisa, Junichi; Fukui, Takashi
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5147
Academic Journal
We investigated the formation of In[sub 0.8]Ga[sub 0.2]As self-assembled quantum dots (SAQDs) grown on SiO[sub 2]-pattemed 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO[sub 2] patterns were filled with various stripe opening windows along the misorientation direction of the substrates. During the growth of the GaAs buffer layer on the opening regions, the steps on the (001) top facet was affected by the widths of the (001) top facet and the misorientation angles of the substrates. Single- or double-row aligned In[sub 0.8]Ga[sub 0.2]As SAQDs having definite interval were successfully fabricated on the (001) top facet with optimized top width and periodicity of step bunching. These results indicate that the selective growth technique of SAQDs by utilizing SiO[sub 2]-patterned vicinal substrates is promising for nanoelectronic device applications such as single-electron memory devices.


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