Reversed truncated cone composition distribution of In[sub 0.8]Ga[sub 0.2]As quantum dots overgrown by an In[sub 0.1]Ga[sub 0.9]As layer in a GaAs matrix

Lenz, A.; Timm, R.; Eisele, H.; Hennig, Ch.; Becker, S. K.; Sellin, R. L.; Pohl, U. W.; Bimberg, D.; Dähne, M.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5150
Academic Journal
We present cross-sectional scanning tunneling microscopy results of self-organized In[sub 0.8]Ga[sub 0.2]As quantum dots covered by an In[sub 0.1]Ga[sub 0.9]As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In[sub 0.1]Ga[sub 0.9]As layer show vertical intermixing.


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