Correlation of resistivity with zinc content in a vapor grown (Cd,Zn)Te:Se

Corregidor, V.; Diéguez, E.; Castaño, J. L.; Fiederle, M.; Babentsov, V.; Fauler, A.; Benz, K.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5153
Academic Journal
We report the possibility to grow semi-insulating (Cd,Zn)Te:Se crystals by the modified Markov method (MMM) from the vapor phase. When oriented Cd(Te,Se) seed material was used for the growth, lattice matching and doping with Se resulted in an increase of resistivity up to several units of 10[sup 9] Ω cm. A homogenous Zn distribution was also observed. The content of Se and Zn in the seed and grown crystals was determined by photoluminescence and energy dispersive analysis by x ray measurements. Resistivity and Zn concentration maps show a good spatial correlation in which the highest values of resistivity correspond to the areas of the highest Zn concentration. The main part of the crystals demonstrate a low extinction coefficient in the IR spectral region, except for the Zn inhomogeneity region.


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