The Mn[sup 3+/2+] acceptor level in group III nitrides

Graf, T.; Gjukic, M.; Brandt, M. S.; Stutzmann, M.; Ambacher, O.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5159
Academic Journal
Molecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 10[sup 20] cm[sup -3] were investigated by optical absorption and photoconductivity measurements. From electron spin resonance Mn is known to be mostly present in the neutral acceptor state in GaN without codoping. This leads to a reassignment of the optical absorption features to a charge transfer from the neutral Mn[sup 3+] oxidation state, either by direct photoionization at 1.8 eV or through a photothermal ionization process via an excited state at 1.42 eV above the Mn[sup 3+] ground state by spin-allowed Mn[sup 3+] [sup 5]E→[sup 5]T internal absorption. The position of the Mn[sup 3+/2+] acceptor level at 1.8 eV above the valence-band edge of GaN makes the realization of carrier-mediated ferromagnetism rather unlikely in GaN:Mn.


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