Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH[sub 4])[sub 2]S[sub x]-treated p-GaN

Lin, Yow-Jon; Wang, Zhi-Long; Chang, Hsing-Cheng
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5183
Academic Journal
We have employed the photoluminescence and x-ray photoelectron spectroscopy measurements to study the effects of (NH[sub 4])[sub 2]S[sub x] treatment on the p-type GaN (p-GaN). After (NH[sub 4])[sub 2]S[sub x] treatment, we found that the reduction of the surface state, related to nitrogen-vacancy defects on the p-GaN surface, led to a reduction in surface band bending by 0.25 eV. The surface band bending reduction and surface state reduction caused by the (NH[sub 4])[sub 2]S[sub x] surface treatment could be useful for the formation of ohmic and Schottky contacts between the metal and p-GaN layers. In addition, the intensity of the 2.8-eV photoluminescence band depended on the amount of nitrogen vacancy of p-GaN, which was also investigated in this study.


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