TITLE

Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO[sub 2] tunnel barrier

AUTHOR(S)
Baik, Seung Jae; Lim, Koeng Su
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5186
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanocrystal floating gate memory employing an amorphous carbon (a-C)/SiO[sub 2] double-layered tunnel barrier was fabricated. The band gap of a-C and conduction band discontinuity between a-C and Si was estimated to be 1.95 and 0.4 eV, respectively. In addition, interface states density of the a-C/SiO[sub 2]/channel Si was estimated from the capacitance-voltage measurement. The nanocrystal memory using this tunnel barrier exhibited enhanced charge retention than that employing a single SiO[sub 2] tunnel barrier whereas the injection efficiency is comparable between them, which is due to the asymmetrical band profile of the tunnel barrier.
ACCESSION #
8737932

 

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