Si doping of high-Al-mole fraction Al[sub x]Ga[sub 1-x]N alloys with rf plasma-induced molecular-beam-epitaxy

Hwang, Jeonghyun; Schaff, William J.; Eastman, Lester F.; Bradley, Shawn T.; Brillson, Leonard J.; Look, David C.; Wu, J.; Walukiewicz, Wladek; Furis, Madalina; Cartwright, Alexander N.
December 2002
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5192
Academic Journal
Very high levels of n-type doping of Al[sub x]Ga[sub 1-x]N alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25 × 10[sup 20] cm[sup -3] when the Al mole fraction was 50%, and 8.5 × 10[sup 19] cm[sup -3] electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.


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