TITLE

Study of ferroelectricity and current–voltage characteristics of CdZnTe

AUTHOR(S)
Fu, D. J.; Lee, J. C.; Choi, S. W.; Lee, S. J.; Kang, T. W.; Jang, M. S.; Lee, H. I.; Woo, Y. D.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
CdZnTe has been characterized by means of polarization-field hysteresis and current-voltage measurements. The CdZnTe is shown to be ferroelectric with polarization endurance up to 10[sup 7] poling cycles. The polarization is significantly influenced by free carriers and can be switched by light illumination. The capacitance of CdZnTe consists of ferroelectric and depletion components. On the other hand, electrical conduction in the CdZnTe is modulated by the polarization, leading to hysteresis in the current-voltage characteristics. Writing and reading measurement has shown a reading-current difference of 0.015 mA at a nondestructive voltage for the binary digits. CdZnTe has been characterized by means of polarization-field hysteresis and current-voltage measurements. The CdZnTe is shown to be ferroelectric with polarization endurance up to 10[sup 7] poling cycles. The polarization is significantly influenced by free carriers and can be switched by light illumination. The capacitance of CdZnTe consists of ferroelectric and depletion components. On the other hand, electrical conduction in the CdZnTe is modulated by the polarization, leading to hysteresis in the current-voltage characteristics. Writing and reading measurement has shown a reading-current difference of 0.015 mA at a nondestructive voltage for the binary digits.
ACCESSION #
8737925

 

Related Articles

  • Optical Properties of Cd[sub 1 — ][sub x]Zn[sub x]Te (0 < x < 0.1) Single Crystals in the Infrared Spectral Region. Belogorokhov, A. I.; Lakeenkov, V. M.; Belogorokhova, L. I. // Semiconductors;Jul2001, Vol. 35 Issue 7, p773 

    Frequency dependences of the transmittance T(ω) of Cd[sub 1-x]Zn[sub x]Te (0 < x < 0.1) single crystals grown by a modified Bridgman method were studied using long-wavelength optical spectroscopy in the temperature range of 5-300 K. A sharp increase in absorption for energies smaller than...

  • Low-cost technique for preparing Cd1-xZnxTe films and solar cells. Basol, Bulent M.; Kapur, Vijay K.; Ferris, Michael L. // Journal of Applied Physics;8/15/1989, Vol. 66 Issue 4, p1816 

    Describes a two-stage process of the preparation of cadmium-zinc-tellurium thin films of various stoichiometries. Properties of the electroplated elemental films; Deposition of the elemental layers; Use of an acidic aqueous solution containing hydrogen-tellurium-oxygen.

  • Photoinduced ferroelectric hysteresis curve in organic CuPc photoconductor/inorganic BaTiO[sub 3] ferroelectric heterojunction photomemory. Park, Young-Geun; Lee, Hea-Yeon; Tanaka, Hidekazu; Tabata, Hitoshi; Kawai, Tomoji // Applied Physics Letters;8/12/2002, Vol. 81 Issue 7, p1318 

    Photoinduced switching of the ferroelectric P-E hysteresis curve has been achieved in organic photoconductor (PC) copper phthalocyanine (CuPc)/inorganic ferroelectric (FE) BaTiO[sub 3] (BTO) heterojunction photomemory in the visible ray region. Light irradiation could switch the remanent...

  • Surface current reduction in (211) oriented Cd0.46Zn0.04Te.50 crystals by Ar bombardment. Voss, L. F.; Beck, P. R.; Conway, A. M.; Graff, R. T.; Nikolic, R. J.; Nelson, A. J.; Payne, S. A. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p014510 

    Cd0.46Zn0.04Te.50 crystals have been exposed to high density Ar plasmas in order to modify the surface chemistry and control the surface conductivity. X-ray photoelectron spectroscopy reveals that this bombardment results in a modified surface atomic ratio, with Cd being preferentially removed...

  • Analysis of luminescence method for determination of Cd1-xZnx Te composition. Glinchuk, K. D.; Litovchenko, N. M.; Prokhorovich, A. V.; Strilchuk, O. N. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 3, p39 

    A detailed analysis of the method for determination of Cd1-xZnxTe composition from measurements of 4.2 K peak position of the emission band induced by annihilation of excitons bound with neutral shallow acceptors is given. Found are the conditions fulfillment of which permits to obtain reliable...

  • Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy. HAWKINS, SAMANTHA A.; VILLA-ALEMAN, ELIEL; DUFF, MARTINE C.; HUNTER, DOUG B.; BURGER, ARNOLD; GROZA, MICHAEL; BULIGA, VLADIMIR; BLACK, DAVID R. // Journal of Electronic Materials;Sep2008, Vol. 37 Issue 9, p1438 

    CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study,...

  • Synthesis and analysis of ternary alloyed ZnXCd1-XS nanocrystals. Ndifor-Angwafor, George N.; Anagho, Solomon G.; Tchuifon, Donald Raoul T. // Der Chemica Sinica;2014, Vol. 5 Issue 4, p17 

    Cadmium acetate salt was exploited in the synthesis of ZnxCd1-xS alloyed nanocrystals by reacting it with zinc salts and elemental sulphur in dodecylamine at high temperatures. Interestingly the obtained ZnxCd1-xS nanocrystals possess quantum confinement. The prepared ZnxCd1-xS nanocrystals were...

  • An automated loop tracer for the study of the growth of ferroelectric hysteresis. Dias, E. D.; Pragasam, R.; Murthy, V. R. K.; Viswanathan, B. // Review of Scientific Instruments;Sep94, Vol. 65 Issue 9, p3025 

    An automated ferroelectric hysteresis loop tracer, developed using an INTEL 8085 microprocessor is described. This setup can be used to study the growth of a hysteresis curve at any desired temperature instantaneously after the application of a field. Since the setup allows the storage of data...

  • Origin of the "up," "down" hysteresis offsets observed from polarization-graded ferroelectric materials. Fellberg, Whitney; Mantese, Joseph; Schubring, Norman; Micheli, Adolph // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p524 

    "Up" and "down" hysteresis offsets were observed in polarization-graded ferroelectrics. The polarization gradients were achieved by imposing temperature gradients across a bulk ferroelectric material near its Curie temperature. In the absence of temperature gradients, no hysteresis offsets were...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics