TITLE

Electronic structure and interband transitions of metallic carbon nanotubes

AUTHOR(S)
D’yachkov, P. N.; Hermann, H.; Kirin, D. V.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5228
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Band structure of the metallic (n,n) carbon nanotubes (coefficients n are the indices of the two-dimensional primitive lattice vectors of the graphene lattice) is calculated in terms of a linear augmented cylindrical wave method. The results are used to correlate the minimum direct energy gaps E[sub 11] between the conduction and valence band singularities with the nanotube diameter d and optical absorption spectra. Significant deviations from the equation E[sub 11]∼d[sup -1] are observed. The ππ[sup *] gap energy increases monotonically with 1/d, whereas the σ,π[sup *] gap width shows a minimum at n = 10. In the (3, 3) tube, the conduction band singularity coincides with the Fermi level, resulting in a drastic increase of the density of states on this level.
ACCESSION #
8737918

 

Related Articles

  • Photoelectron spectroscopy measurements of the band gap in porous silicon. van Buuren, T.; Tiedje, T.; Dahn, J.R.; Way, B.M. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2911 

    Measures the conduction and valence band gap energies of porous silicon (Si). Use of x-ray absorption and photoemission spectroscopy; Comparison of results with the quantum confinement model for the optical properties of porous Si; Absence of oxygen in the as-prepared materials.

  • Effect of impurity band conduction on the electrical characteristics of n-type CuInSe[sub 2]. Essaleh, L.; Wasim, S. M.; Galibert, J. // Journal of Applied Physics;10/15/2001, Vol. 90 Issue 8, p3993 

    The Hall effect and electrical resistivity of n-type CuInSe[sub 2] single crystals are measured between 4.2 and 300 K. Using a single conduction band model, the variation of the electron concentration with temperature above 100 K is explained in terms of the thermal activation of a shallow...

  • A pressure dependence model for the band gap energy of the dilute nitride GaNP. Chuan-Zhen Zhao; Tong Wei; Na-Na Li; Sha-Sha Wang; Ke-Qing Lu // Journal of Applied Physics;2014, Vol. 116 Issue 6, p063512-1 

    The pressure dependence of the band gap energy of the dilute nitride GaNP is analyzed. It is found that the pressure dependence of the Γ conduction band minimum (CBM) is stronger than that of the X CBM. We also find that the energy difference between the X CBM and the Γ CBM in GaNP...

  • Theoretical Study of One-Intermediate Band Quantum Dot Solar Cell. Aly, Abou El-Maaty; Nasr, Ashraf // International Journal of Photoenergy;2014, p1 

    The intermediate bands (IBs) between the valence and conduction bands play an important role in solar cells. Because the smaller energy photons than the bandgap energy can be used to promote charge carriers transfer to the conduction band and thereby the total output current increases while...

  • Energy gap induced by lattice deformation in carbon nanotubes. Suzuura, Hidekatsu; Ando, Tsuneya // AIP Conference Proceedings;2001, Vol. 590 Issue 1, p269 

    Electronic states in metallic carbon nanotubes under external force have been studied based on the effective-mass theory. Constant strains open energy gap and what type of strains can do so is dependent on the chirality of carbon nanotube. The induced gap and the total electronic energy agree...

  • Photoemission Study of the Electronic Structure of Layered Oxysulfide ((LaO)CuS). AKINLAMI, J. O.; MAWOBODE, A. // Journal of Active & Passive Electronic Devices;2012, Vol. 7 Issue 4, p356 

    The electronic structure of LaOCuS has been investigated by means of photoemission spectroscopy. It was found that the theoretical photoemission (PES) spectrum at hw = 21.2eV shows four distinct structures with peaks at -9.2 eV, - 12.2 eV, - 16.7 eV and - 19.7 eV but on increasing the photon...

  • Type-I semiconductor heterostructures with an indirect-gap conduction band. Shamirzaev, T. // Semiconductors;Jan2011, Vol. 45 Issue 1, p96 

    In spite of a great number of publications concerned with studies of semiconductor heterostructures, the type-I semiconductor heterostructures, in which the ground electron state belongs to the indirect-gap ( X and L) minimums of the conduction band, have remained poorly understood until...

  • Conduction bands in classical periodic potentials. Arpornthip, Tanwa; Bender, Carl M. // Pramana: Journal of Physics;Aug2009, Vol. 73 Issue 2, p259 

    The energy of a quantum particle cannot be determined exactly unless there is an infinite amount of time to perform the measurement. This paper considers the possibility that ΔE, the uncertainty in the energy, may be complex. To understand the effect of a particle having a complex energy,...

  • Band Gap Engineering of a Ternary Copolymer Based on Polythiophene and Its Derivatives Using Genetic Algorithm. Kaur, Avneet; Bakhshi, A. K. // International Research Journal of Pure & Applied Chemistry;2012, Vol. 2 Issue 1, p55 

    The electronic and conduction properties of a copolymer, based on polythiophene (PTP) and its derivatives: polyisothianaphthene (PITN) and polyisonaphthothiophene (PINTP), have been studied. The optimum percentages of the homopolymer units PTP, PITN and PINTP in the copolymer have been...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics