TITLE

Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

AUTHOR(S)
Veleschuk, V.; Vlasenko, A.; Kisselyuk, M.; Lyashenko, O.
PUB. DATE
March 2013
SOURCE
Journal of Applied Spectroscopy;Mar2013, Vol. 80 Issue 1, p117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas for a fixed voltage all correlate with the density of critical extended defects, the luminous flux, and the uniformity of current flow, and are determined by the type of substrate (Si, SiC, AlO).
ACCESSION #
87087380

 

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