Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well

Kaiser, S.; Mensing, T.; Worschech, L.; Klopf, F.; Reithmaier, J. P.; Forchel, A.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4898
Academic Journal
We have grown self-assembled InAs quantum dots embedded in the center of an InGaAs quantum well by molecular-beam epitaxy. Using electron-beam lithography and wet etching techniques, small mesas with only a few quantum dots were fabricated. At room temperature, the quantum dots have an emission wavelength of 1.3 μm. By photoluminescence spectroscopy at low temperatures, we observe the emission lines of excitons and biexcitons in single-dot structures. The assignment of exciton and biexciton recombination is based on the characteristic excitation intensity dependence of these states. A biexciton binding energy of about 3.5 meV is obtained for the present dots.


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