Post-growth p-type doping enhancement for ZnSe-based lasers using a Li[sub 3]N interlayer

Schulz, Oliver; Strassburg, Matthias; Rissom, Thorsten; Pohl, Udo W.; Bimberg, Dieter; Klude, Matthias; Hommel, Detlef
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4916
Academic Journal
A method to increase decisively the p-type doping level in ZnSe-based laser diodes is described. Upon Li[sub 3]N indiffusion, the formation of a stable acceptor complex is observed. Free hole concentrations of 8 × 10[sup 18] cm[sup -3] are obtained. This value is at least one order of magnitude larger than typical p-type doping levels achieved by molecular-beam epitaxy of ZnSe. In addition, no compensation effects occur, as usually observed for p-type doping using either Li or N. ZnSe-based lasers processed by applying this post-growth p-doping enhancement technology show significantly improved properties.


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