TITLE

Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds

AUTHOR(S)
Chiu, Y. S.; Ya, M. H.; Su, W. S.; Chen, T. T.; Chen, Y. F.; Lin, H. H.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4943
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Anisotropic property of type-II GaAs/GaAsSb heterostructures was studied by photoluminescence (PL) and photoconductivity (PC). It was found that the PL and PC spectra exhibit a strong in-plane polarization with respect to 〈011〉 axis with polarization degrees up to 40%. We showed that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells was attributed to the intrinsic property of the orientation of chemical bonds at heterointerfaces.
ACCESSION #
8691555

 

Related Articles

  • High-speed GaAs/AlGaAs photoconductive detector using a p-modulation-doped multiquantum well structure. Kaede, K.; Arakawa, Y.; Derry, P.; Paslaski, J.; Yariv, A. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1096 

    A new type of high-speed GaAs/AlGaAs photoconductive detector utilizing the high drift velocity of minority electrons in a p-modulation doped multiquantum well structure is demonstrated. In this modulation-doped structure, the electron scattering is reduced, which leads to the enhancement of the...

  • Molecular beam epitaxial growth and optical characterization of GaAs/Al[sub x]Ga[sub 1-x]As.... Garcia, B.J.; Fontaine, C. // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2691 

    Examines the molecular beam epitaxial growth conditions of gallium arsenide/aluminum gallium arsenide quantum wells on nominally oriented gallium arsenide substrates. Presentation of photoluminescence measurement; Significance of growth interruption for high temperatures; Discussion on the...

  • Magnetic excitons in near-surface quantum wells: experiment and theory. Kulakovskiı, V. D.; Kulik, L. V.; Yablonskiı, A. L.; Dzyubenko, A. B.; Gippius, N. A.; Tikhodeev, S. G.; Forchel, A. // Physics of the Solid State;May98, Vol. 40 Issue 5, p740 

    We have measured the photoluminescence spectra and photoluminescence excitation spectra of magnetic excitons in InGaAs/GaAs near-surface quantum wells in a magnetic field. We have quantitatively investigated the effect of dielectric enhancement of excitons in quantum wells brought about by...

  • Photoluminescence study of interdiffusion in In[sub 0.53]Ga[sub 0.47]As/InP surface quantum wells. Oshinowo, J.; Forchel, A.; Grutzmacher, D.; Stollenwerk, M.; Heuken, M.; Heime, K. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2660 

    Investigates the thermal stability and interdiffusion of InGaAs/InP surface quantum wells. Achievement of well-defined photoluminescence emission spectra; Observation of strong emission energy shift; Estimation of interdiffusion coefficient.

  • Low-Temperature Photoluminescence and X-ray Diffractometry Study of In[sub x]Ga[sub 1 � ][sub x]As Quantum Wells. Evstigneev, S. V.; Imamov, R. M.; Lomov, A. A.; Sadof�ev, Yu. G.; Khabarov, Yu. V.; Chuev, M. A.; Shipitsin, D. S. // Semiconductors;Jun2000, Vol. 34 Issue 6, p693 

    The structures grown by molecular-beam epitaxy with In[sub x]Ga[sub 1-x]As quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of...

  • Photoluminescence and structure properties of GaAs/ZnSe quantum wells. Zhang, S.; Kobayashi, N. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p883 

    Examines the quantum size effect in photoluminescence (PL) of zinc selenide (ZnSe)/gallium arsenide (GaAs)/ZnSe quantum wells by improving the quality of GaAs well layer on ZnSe barrier. Implementation of migration-enhanced epitaxy of GaAs well layer; Changes to higher energies of PL spectra;...

  • 1.3 mum photoluminescence from InGaAs quantum dots on GaAs. Mirin, R.P.; Ibbetson, J.P. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3795 

    Demonstrates room-temperature photoluminescence at 1.3 mum from coherently strained indium gallium arsenide quantum dots grown on gallium arsenide substrates. Growth of quantum dots by molecular beam epitaxy; Similarity of the integrated photoluminescence intensity to the quantum well; Usage of...

  • Migration-enhanced epitaxy on a (111)B oriented GaAs substrate. Imamoto, H.; Sato, F.; Imanaka, K.; Shimura, M. // Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p115 

    AlGaAs layers with a featureless specular surface morphology were grown successfully on an exactly (111)B oriented GaAs substrate by migration-enhanced epitaxy (MEE) even at growth temperatures below 500 °C. We have also observed reflection high-energy electron diffraction (RHEED) intensity...

  • Recombination lifetime of carriers in GaAs-GaAlAs quantum wells near room temperature. Arakawa, Yasuhiko; Sakaki, Hiroyuki; Nishioka, Masao; Yoshino, Junji; Kamiya, Takeshi // Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p519 

    The lifetime τ of carriers in undoped GaAs-GaAlAs quantum well structures was studied at room temperature by using the photoluminescence phase shift method. We have found that τ is inversely proportional to the carrier concentration under the excitation levels of 1016–1018 cm-3....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics