Metal–insulator–metal transition in Sr[sub 2]Rh[sub 1-x]Ru[sub x]O[sub 4](0≤x≤1)

Koida, T.; Wakisaka, T.; Itaka, K.; Koinuma, H.; Matsumoto, Y.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4955
Academic Journal
Structural and electrical properties of c-axis oriented epitaxial Sr[sub 2]Rh[sub 1-x]Ru[sub x]O[sub 4] (0≤x≤ 1) films were systematically investigated. The composition-spread films were fabricated on a temperature gradient (LaA1O[sub 3])[sub 0.3](Sr[sub 2]A1TaO[sub 6])[sub 0.7] substrate to quickly optimize the growth temperature for a high-quality crystalline film having each composition (x). An anomalous c-axis length dependence on x was observed, and it was accompanied by a distinct change in electric property, that is, a metal-insulator-metal transition.


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