AlGaN layers grown on GaN using strain-relief interlayers

Chen, C. Q.; Zhang, J. P.; Gaevski, M. E.; Wang, H. M.; Sun, W. H.; Fareed, R. S. Q.; Yang, J. W.; Khan, M. Asif
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4961
Academic Journal
We report on a study to compare the growth of thick A1GaN layers on GaN with different strain-relief interlayers. A set of ten period A1N/A1GaN superlattices was found to be the most efficient approach for the strain relief. The superlattice interlayer not only decreases the tensile strain but also improves the crystal structural quality. Thus, 2-μm-thick, high quality n[sup +]-A1[sub 0.2]Ga[sub 0.8]N layers can be grown on GaN epilayers without any cracks.


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