Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface

Rakoczy, D.; Strasser, G.; Smoliner, J.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4964
Academic Journal
In this work, ballistic electron emission microscopy/spectroscopy on biased GaAs-A1As double-barrier resonant tunneling structures is used to study the energetic distribution of ballistic electrons transmitted through an Au-GaAs interface. Measuring the ballistic current as a function of collector bias, we observe a surprisingly broad energetic distribution of ballistic electrons in the GaAs. This observation can be explained by electron "refraction" effects at the Au-GaAs interface and the influence of inelastic scattering in the drift region of the sample.


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