TITLE

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

AUTHOR(S)
Reshchikov, M. A.; Morkoç, H.; Park, S. S.; Lee, K. Y.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4970
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex.
ACCESSION #
8691546

 

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