Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Reshchikov, M. A.; Morkoç, H.; Park, S. S.; Lee, K. Y.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4970
Academic Journal
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex.


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