Highly crystallized as-grown smooth and superconducting MgB[sub 2] films by molecular-beam epitaxy

van Erven, A. J. M.; Kim, T. H.; Muenzenberg, M.; Moodera, J. S.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4982
Academic Journal
We have investigated the growth of superconductive thin films of magnesium diboride (MgB[sub 2]) by molecular-beam epitaxy. A Si(111) substrate with a seed layer of MgO was used for the growth of these films by varying parameters such as the growth temperature, Mg:B flux ratio and deposition rate as well as the background pressure. It was found that highly crystallized films could already form at 250°C; however, only in a narrow window of growth parameters. The highest critical temperature of 35.2 K with a sharp transition (δT[sub C] of 0.5 K) was observed for films grown at 300°C. Using a capping layer of MgO proved to be highly beneficial for the preservation and the smoothness of these films. Together with the fact that MgO proved to be a good seed layer for thin films of MgB2 makes it an ideal candidate for growing all epitaxial MgB[sub 2] Josephson junctions.


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