High-Curie-temperature Ga[sub 1-x]Mn[sub x]As obtained by resistance-monitored annealing

Edmonds, K. W.; Wang, K. Y.; Campion, R. P.; Neumann, A. C.; Farley, N. R. S.; Gallagher, B. L.; Foxon, C. T.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4991
Academic Journal
We show that by annealing Ga[sub 1-x]Mn[sub x]As thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature T[sub C] and conductivity can be obtained. T[sub C] is unambiguously determined to be 118 K for Mn concentration x = 0.05, 140 K for x = 0.06, and 120 K for x = 0.08. We also identify a clear correlation between T[sub C] and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions.


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