Epitaxial growth and dielectric properties of homologous Sr[sub m-3]Bi[sub 4]Ti[sub m]O[sub 3m+3] (m=3,4,5,6) thin films

Zhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5009
Academic Journal
The first four members of Bi-layered Sr[sub m-3]Bi[sub 4]Ti[sub m]O[sub 3m+3] homologous series with m = 3, 4, 5, and 6, i.e., Bi[sub 4]Ti[sub 3]O[sub 12], SrBi[sub 4]Ti[sub 4]O[sub 15], Sr[sub 2]Bi[sub 4]Ti[sub 5]O[sub 18], and Sr[sub 3]Bi[sub 4]Ti[sub 6]O[sub 21], were grown on SrTiO[sub 3] (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [1&1macr;0]Sr[sub m-3]Bi[sub 4]Ti[sub m]O[sub 3m+3][010]SrTiO[sub 3]. HRTEM cross-sectional images show that the films with m = 3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221 ± 13, 205 ± 15, 261±29, and 249 ± 17 for films with m=3, 4, 5, and 6, respectively.


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