TITLE

Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices

AUTHOR(S)
Kang, Chang Seok; Onishi, Katsunori; Kang, Laegu; Lee, Jack C.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5018
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of hafnium (Hf) contamination on the properties of n[sup +] -polycrystalline-Si/SiO[sub 2]/Si metaloxide-semiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (V[sub fb]) and substrate doping concentrations (N[subA]) of the MOS capacitors were not dependent on the Hf dose levels of 1 × 10[sup 11] - 1 × 10[sup 13] atoms/cm². Leakage current density of the MOS capacitor was also not affected by the implant conditions. Electron channel mobility of n-type MOS field-effect transistors with 45-Å-thick SiO[sub 2] as gate dielectrics was not degraded by the implantation of Hf ions into the Si substrates.
ACCESSION #
8691530

 

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