TITLE

Charge imaging and manipulation using carbon nanotube probes

AUTHOR(S)
Tzeng, S.-D.; Wu, C.-L.; You, Y.-C.; Chen, T. T.; Gwo, S.; Tokumoto, H.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5042
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Due to their high aspect ratio, well-defined cylindrical structure, and good electrical conductivity, carbon nanotubes (CNTs) are ideal probes for "true" local imaging of electric domain structures at the nanoscale. By performing force-distance measurements and tip-shape profiling with a uniformly charged oxide square, we clearly demonstrate the local nature of the CNT tip for electrostatic force microscopy. We show that CNTs can be used to probe long-range electrostatic forces with a lateral resolution better than 5 nm.
ACCESSION #
8691522

 

Related Articles

  • Nanotube Devices: A Microscopic Model. Bulashevich, K. A.; Rotkin, S. V. // JETP Letters;2/25/2002, Vol. 75 Issue 4, p205 

    A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube...

  • Electrostatic engineering of nanotube transistors for improved performance. Heinze, S.; Tersoff, J.; Avouris, Ph. // Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5038 

    With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high OFF currents except at low drain voltages. Introducing an asymmetry between source and drain electrostatics can improve the performance, reducing OFF currents and extending...

  • Universal description of channel conductivity for nanotube and nanowire transistors. Rotkin, S.V.; Ruda, H.E.; Shik, A. // Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1623 

    A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel...

  • Metal–insulator–semiconductor electrostatics of carbon nanotubes. Guo, Jing; Goasguen, Sebastien; Lundstrom, Mark; Datta, Supriyo // Applied Physics Letters;8/19/2002, Vol. 81 Issue 8, p1486 

    Carbon nanotube metal-insulator-semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon...

  • Electrostatic charge distribution on single-walled carbon nanotubes. Chunyu Li; Tsu-Wei Chou // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p063103 

    This letter reports a study of charge distribution on single-walled carbon nanotubes. An atomistic moment method is proposed based on classical electrostatics theory and the results of analysis are compared with those obtained from ab initio approach. It is shown that the classical...

  • Electrostatic contribution from solvent in modulating single-walled carbon nanotube association. Shu-Ching Ou; Patel, Sandeep // Journal of Chemical Physics;9/21/2014, Vol. 141 Issue 11, p1 

    We perform all-atom molecular dynamics simulations to compute the potential of mean force (PMF) between two (10,10) single-walled carbon nanotubes solvated in pure nonpolarizable SPC/E and polarizable TIP4P-FQ water, at various temperatures. In general, the reversible work required to bring two...

  • Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending. Shu-Cheng Chin; Yuan-Chih Chang; Chia-Seng Chang; Wei-Yen Woon; Li-Te Lin; Hun-Jan Tao // Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p253102 

    A technique for profiling doping fluctuation around source/drain regions on a sub-45-nm device is demonstrated. The mapping is achieved through the amplitude measurement of electrostatic force microscopy (EFM). A discovery was found that the EFM amplitude signal would reverse due to strong band...

  • Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy. Brunel, David; Deresmes, Dominique; Mélin, Thierry // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223508 

    We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete...

  • Electrostatic screening and Friedel oscillations in semiconducting nanotubes. Chaplik, A. V.; Magarill, L. I.; Vitlina, R. Z. // Low Temperature Physics;Oct2008, Vol. 34 Issue 10, p865 

    In 3D and 2D electronic systems the singular contribution to the static permittivity [variant_greek_epsilon] (Kohn singularity) is a small correction to the regular part of [variant_greek_epsilon] but it results in the leading term in asymptotic behavior of the screened potential (Friedel...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics