GaN nanorods coated with pure BN

Han, Wei-Qiang; Zettl, A.
December 2002
Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5051
Academic Journal
We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 μm. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface.


Related Articles

  • Investigation of MOVPE-grown GaN layers doped with As atoms. Tsatsul�nikov, A. F.; Ber, B. Ya.; Kartashova, A. P.; Kudryavtsev, Yu. A.; Ledentsov, N. N.; Lundin, V. V.; Maksimov, M. V.; Sakharov, A. V.; Usikov, A. S.; Alf�rov, Zh. I.; Hoffmann, A. // Semiconductors;Jul99, Vol. 33 Issue 7, p728 

    Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metalorganic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes...

  • Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states. Sun, Chi-Kuang; Liang, Jian-Chin; Yu, Xiang-Yang; Keller, Stacia; Mishra, Umesh K.; DenBaars, Steven P. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2724 

    Ultrafast carrier dynamics of bandtail states in an unintentionally doped gallium nitride sample was investigated using femtosecond transient transmission measurements. The transient responses of shallow bandtail states resemble those of above band gap extended states. The transient responses of...

  • Hardness and fracture toughness of bulk single crystal gallium nitride. Drory, M. D.; Ager, J. W.; Suski, T.; Grzegory, I.; Porowski, S. // Applied Physics Letters;12/23/1996, Vol. 69 Issue 26, p4044 

    Basic mechanical properties of single crystal gallium nitride are measured. A Vickers (diamond) indentation method was used to determine the hardness and fracture toughness under an applied load of 2N. The average hardness was measured as 12±2 GPa and the average fracture toughness was...

  • Room-temperature photoenhanced wet etching of GaN. Minsky, M.S.; White, M. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1531 

    Presents the laser-enhanced, room temperature wet etching of gallium nitride. Measurement of the etch rates of a few hundred angstrom per minute for hydrochloride; Evidence for the photochemical nature of the etching; Characterization of electrolytes.

  • BLUE DIODE LASERS.  // Physics Today;Oct2000, Vol. 53 Issue 10, p31 

    Deals with compact blue-emitting gallium nitride semiconductor lasers. Commercial impact of blue diode lasers; Development of nitride light emitters; Expectations regarding the technology.

  • Polymer PBT/n-GaN metal–insulator–semiconductor structure. Tu, L. W.; Tsao, P. H.; Lee, K. H.; Lo, Ikai; Bai, S. J.; Wu, C. C.; Hsieh, K. Y.; Sheu, J. K. // Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4589 

    Organic poly(p-phenylenebenzobisthiazole), PBT, is spin coated on n-GaN epilayer to serve as a gate insulating layer. The GaN is grown on c sapphire by the metalorganic-chemical-vapor-deposition method. A metal-insulator-semiconductor structure is fabricated with Al ohmic contact to the n-GaN,...

  • INDUSTRY LOOKS TO GAN.  // Power Electronics Technology;Jun2010, Vol. 36 Issue 6, p35 

    The article presents views of experts from the semiconductor industry on the advantages of high power Gallium Nitride (GaN) devices.

  • Highly anisotropic photoenhanced wet etching of n-type GaN. Youtsey, C.; Adesida, I. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2151 

    Describes a photoelectrochemical etching process for n-type gallium nitride films. Use of potassium hydroxide and mercury arc lamp illumination; Provision of highly anisotropic etch profiles and high etch rates; Characterization of the etch rate and photocurrent.

  • Zeeman splitting of shallow donors in GaN. Mireles, Francisco; Ulloa, Sergio E. // Applied Physics Letters;1/11/1999, Vol. 74 Issue 2, p248 

    Studies the Zeeman splitting of the donor spectra in cubic and hexagonal GaN using an effective mass theory approach. Description of the chemical shift of the different substitutional dopants using soft-core pseudopotentials; Donor ground states calculated.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics