Tilted epitaxy on (211)-oriented substrates

Woo, S. Y.; Devenyi, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.; Botton, G. A.
April 2013
Applied Physics Letters;4/1/2013, Vol. 102 Issue 13, p132103
Academic Journal
Spontaneous tilting of lattice mismatched epilayers grown on (211)-oriented substrates has been observed in numerous systems in literature. Here, we have examined a model system, GaSb/Si(211), with two dimensional X-ray diffraction and conventional transmission electron microscopy, and developed a universal model which explains the origin of the tilt phenomenon as the minimization of projected lattice mismatch for low-index planes across the film/substrate interface. The model developed predicts the tilt for lattice mismatches in the range of 0%-20% covering most semiconductor heteroepitaxial systems.


Related Articles

  • Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates. Schreyeck, S.; Tarakina, N. V.; Karczewski, G.; Schumacher, C.; Borzenko, T.; Brüne, C.; Buhmann, H.; Gould, C.; Brunner, K.; Molenkamp, L. W. // Applied Physics Letters;1/28/2013, Vol. 102 Issue 4, p041914 

    Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The...

  • Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates. Chai, J.; Noriega, O.; Dedigama, A.; Kim, J.; Savage, A.; Doyle, K.; Smith, C.; Chau, N.; Pena, J.; Dinan, J.; Smith, D.; Myers, T. // Journal of Electronic Materials;Nov2013, Vol. 42 Issue 11, p3090 

    Cross-section electron micrographs, cathodoluminescence images, and confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range...

  • Structural analysis of interfacial strained epitaxial BiMnO3 films fabricated by chemical solution deposition. Naganuma, Hiroshi; Kovacs, Andras; Harima, Tetsuro; Shima, Hiromi; Okamura, Soichiro; Hirotsu, Yoshihiko // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07D915 

    An interfacial epitaxial BiMnO3 layer was fabricated by chemical solution deposition on SrTiO3 (100) substrate, and the microstructure of the film was analyzed by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). The TEM observation revealed the epitaxial growth...

  • Epitaxial growth of γ-CoV2O6 thin films: Structure, morphology, and magnetic properties. Lenertz, M.; Colis, S.; Ulhaq-Bouillet, C.; Dinia, A. // Applied Physics Letters;5/27/2013, Vol. 102 Issue 21, p212407 

    We report on the epitaxial growth of 100 nm thick triclinic γ-CoV2O6 thin films deposited by pulsed laser deposition on TiO2(100) substrate. The layers were grown in narrow experimental conditions, at 600 °C and 0.1 millibar oxygen pressure. X-ray diffraction and transmission electron...

  • Strain relaxation properties of InAsyP1-y metamorphic materials grown on InP substrates. Hudait, Mantu K.; Lin, Y.; Ringel, S. A. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p061643 

    The strain relaxation mechanism and defect properties of compositionally step-graded InAsyP1-y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP layers having lattice misfits ranging from 1% to 1.4% with respect to InP, as well as subsequently grown lattice matched...

  • Thickness and substrate effects on AlN thin film growth at room temperature. B. Abdallah; C. Duquenne; M. Besland; E. Gautron; P. Jouan; P. Tessier; J. Brault; Y. Cordier; M. Djouadi // European Physical Journal - Applied Physics;Sep2008, Vol. 43 Issue 3, p309 

    Hexagonal AlN thin films have been deposited by DC reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon Si (100) substrates. For a second set, AlN films were deposited on 200?nm (002) oriented AlN epitaxial layer obtained by...

  • Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition. Jang, J. H.; Herrero, A. M.; Gila, B.; Abernathy, C.; Craciun, V. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p063514 

    GaN layers were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition with a conventional two step growth method. The effect of the three-dimensional (3D) growth mode time (t3D), which depends on trimethylgallium flow rate and growth temperature, on the crystalline...

  • Functional ferroelectric tunnel junctions on silicon. Guo, Rui; Wang, Zhe; Zeng, Shengwei; Han, Kun; Huang, Lisen; Schlom, Darrell G.; Venkatesan, T.; Ariando; Chen, Jingsheng // Scientific Reports;7/31/2015, p12576 

    The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has...

  • High-quality InAs[sub y]P[sub 1-y] step-graded buffer by molecular-beam epitaxy. Hudait, M. K.; Lin, Y.; Wilt, D. M.; Speck, J. S.; Tivarus, C. A.; Heller, E. R.; Pelz, J. P.; Ringel, S. A. // Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3212 

    Relaxed, high-quality, compositionally step-graded InAs[SUBy]P[SUB1-y] layers with an As composition of y = 0.4, corresponding to a lattice mismatch of ∼1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics