TITLE

Electroluminescence from strain-compensated Si[sub 0.2]Ge[sub 0.8]/Si quantum-cascade structures based on a bound-to-continuum transition

AUTHOR(S)
Diehl, L.; Menteşe, S.; Müller, E.; Grützmacher, D.; Sigg, H.; Gennser, U.; Sagnes, I.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faist, J.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4700
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intersubband electroluminescence from strain-compensated Si/Si[sub 0.2]Ge[sub 0.8] quantum cascade (QC) structures, consisting of up to 30 periods grown by molecular beam epitaxy on Si[sub 0.5]Ge[sub 0.5] pseudosubstrates is reported. The design of the active region is based on a so-called "bound-to-continuum transition." The intersubband radiation is emitted at a wavelength of 7 µm and is polarized, as expected for intersubband transitions between heavy hole states. A good agreement with photocurrent measurements is also found.
ACCESSION #
8652469

 

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