TITLE

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

AUTHOR(S)
Contreras, O.; Ponce, F. A.; Christen, J.; Dadgar, A.; Krost, A.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4712
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The addition of bursts of silicon has been observed to correlate with the reduction of threading screw dislocations during epitaxial growth of GaN on silicon by metalorganic chemical vapor deposition. The reduction is associated with bending of screw dislocations and "pairing" with equivalent neighboring dislocations with opposite Burgers vectors. This results in the formation of square dislocation loops. When the right type of dislocation is not available, the dislocation continues propagating in the original direction, leaving behind a kink at the silicon-rich position. These observations apply only to dislocations with a screw component. Edge dislocations are not affected by silicon delta-doping. A mechanism for the termination of threading screw dislocation is proposed, which involves pinning by the silicon impurities of the surface lattice steps associated with screw dislocations.
ACCESSION #
8652465

 

Related Articles

  • Material properties of high-quality GaAs epitaxial layers grown on Si substrates. Fischer, R.; Morkoç, H.; Neumann, D. A.; Zabel, H.; Choi, C.; Otsuka, N.; Longerbone, M.; Erickson, L. P. // Journal of Applied Physics;9/1/1986, Vol. 60 Issue 5, p1640 

    Investigates the materials properties of gallium arsenide (GaAs) on silicon (Si) epitaxial layers. Problems associated with the growth of GaAs on Si; Details of the issues of dislocation reduction and suppression of antiphase domains; Techniques used for dislocation control.

  • Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxy. Salih, Ali S. M.; Radzimski, Z.; Honeycutt, J.; Rozgonyi, G. A.; Bean, K. E.; Lindberg, K. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1678 

    Gated diode leakage current and minority-carrier lifetime are compared between Si wafers extrinsically gettered with epitaxial misfit dislocations and reference homoepitaxial material. The stability and gettering efficiency of the interfacial misfit dislocations have been verified by measuring...

  • Low-dimensional structures generated by misfit dislocations in the bulk of.... Shiryaev, S.Yu.; Jensen, F. // Applied Physics Letters;10/6/1997, Vol. 71 Issue 14, p1972 

    Investigates the capability of misfit dislocations in the bulk of silicon[1-x]germanium[sub x]/silicon heteroepitaxial systems. Uses of the crystallographic slip originating from graded Si[sub 1-x]Ge[sub x] layers; Information on alloy composition modulation on a compositionally modulated...

  • Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates. Choi, C.; Otsuka, N.; Munns, G.; Houdre, R.; Morkoç, H.; Zhang, S. L.; Levi, D.; Klein, M. V. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p992 

    Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates were subjected to annealing under As overpressure at 650, 750, and 850 °C for 1/2 h. A substantial reduction in the dislocation density near the interface and in the bulk of the epitaxial layers was observed for...

  • Dislocation effects on carrier concentration for molecular-beam-epitaxially grown GaAs. Shinohara, Masanori; Hyuga, Fumiaki; Watanabe, Kazuo; Imamura, Yoshihiro // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p304 

    Presents a study that investigated the dislocation effects on carrier concentration for silicon (Si)-doped and Si-implanted molecular-beam-epitaxially grown gallium arsenide layers by small area Hall measurements. Absence of correlation of carrier concentration with dislocation density and...

  • Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Natali, F.; Semond, F.; Massies, J.; Byrne, D.; Laügt, S.; Tottereau, O.; Vennéguès, P.; Dogheche, E.; Dumont, E. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1386 

    We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using ammonia. The structural properties are assessed by reflection high-energy electron diffraction, atomic force microscopy, transmission electron...

  • Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers. Zhang, N.; Chen, Y.; Zhang, Y.; Dudley, M.; Stahlbush, R. E. // Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122108 

    A model is presented for the formation mechanism of dislocation half-loop arrays formed during the homoepitaxial growth of 4H-SiC. The reorientation during glide of originally screw oriented threading segments of basal plane dislocation (BPD) renders them susceptible to conversion into sessile...

  • Material quality requirements for efficient epitaxial film silicon solar cells. Alberi, Kirstin; Martin, Ina T.; Shub, Maxim; Teplin, Charles W.; Romero, Manuel J.; Reedy, Robert C.; Iwaniczko, Eugene; Duda, Anna; Stradins, Paul; Branz, Howard M.; Young, David L. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073502 

    The performance of 2-μm-thick crystal silicon (c-Si) solar cells grown epitaxially on heavily doped wafer substrates is quantitatively linked to absorber dislocation density. We find that such thin devices have a high tolerance to bulk impurities compared to wafer-based cells. The minority...

  • Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates. Pei, C. W.; Turk, B.; Wang, W. I.; Kuan, T. S. // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p5959 

    A simplified model of the mechanism of dislocation reduction in epilayers grown on compliant substrates by molecular-beam epitaxy has been developed based on the dislocation theory and detailed experiments. Theoretical results calculated with this model indicate that up to 100-fold defect...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics