TITLE

Depth profiling of Si nanocrystals in Si-implanted SiO[sub 2] films by spectroscopic ellipsometry

AUTHOR(S)
Chen, T. P.; Liu, Y.; Tse, M. S.; Ho, P. F.; Dong, Gui; Fung, S.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4724
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report an approach to depth profiling of Si nanocrystals embedded in SiO[sub 2] film based on spectroscopic ellipsometry. The SiO[sub 2] film is divided into many sublayers with equal thickness, and each sublayer is characterized by its nanocrystal concentration. In the spectral fittings, the effective dielectric function of each sublayer is obtained from an effective medium approximation by using the dielectric function of Si nanocrystal that is calculated with either the bond contraction or the phenomenological models for the band gap expansion of nanocrystals. The fittings yield the nanocrystal depth profiles and the nanocrystal sizes as well. The depth profiles from the two models are similar, and they are in good agreement with secondary ion mass spectroscopy analysis.
ACCESSION #
8652461

 

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