Change in photoluminescence from Er-doped TiO[sub 2] thin films induced by optically assisted reduction

Komuro, Shuji; Katsumata, Tooru; Kokai, Hideki; Morikawa, Takitaro; Zhao, Xinwei
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4733
Academic Journal
Erbium-doped TiO[sub 2] (TiO[sub 2]:Er) thin films with the anatase structure have been prepared on Si substrate by laser ablation. Sharp and intense Er-related emission in the visible region as well as in the IR region has been observed under over-band-gap excitation. The broad photoluminescence (PL) peaking at about 530 nm newly appears at low temperature. It has been understood that the broad PL is induced by an optically assisted reduction effect that is caused by both the H[sub 2]O adsorption and the reduction process of TiO[sub 2] to Ti[sub 2]O[sub 3] by UV illumination. In the IR region, Er-related emission consisted of one main peak located at 1.534 µm and many subpeaks located at around 1.54 µm can be observed even at room temperature. The drastic thermal quenching of the Er-related 1.54 µm emission is also considered due to the optically assisted reduction effect.


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