Microstructural dependence of electron and hole transport in low-temperature-grown polycrystalline-silicon thin-film solar cells

Matsui, Takuya; Muhida, Riza; Kawamura, Tomohiro; Toyama, Toshihiko; Okamoto, Hiroaki; Yamazaki, Tsutomu; Honda, Shinya; Takakura, Hideyuki; Hamakawa, Yoshihiro
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4751
Academic Journal
Carrier transport properties of undoped polycrystalline silicon (poly-Si) thin films prepared by SiH[sub 4]-H[sub 2] plasma at low temperature have been investigated. The ac-conductivity measurement technique has been applied to poly-Si i layers with an n-i-n junction structure in order to characterize the electron conductivity along the growth direction. Furthermore, the hole conductivity has been measured with p-i-p junction structures. The temperature dependence of ac conductivity reveals that poly-Si films with relatively low crystalline volume fraction (X[sub c]∼50%) exhibit intrinsic character, while the poly-Si films with high X[sub c] (> 50%) exhibit n-type character with activation energies less than 0.15 eV. Based on these results, the relationship among microstructure, carrier transport, and photovoltaic performance of poly-Si solar cells is discussed.


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