Electronic properties of GaN induced by a subsurface stressor

Waltereit, P.; Romanov, A. E.; Speck, J. S.
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4754
Academic Journal
The influence of the strain field originating from a subsurface point source of dilatation (point stressor) on the electronic properties of nitride semiconductors is investigated. In the far field, real quantum dots can be viewed as such point stressors. The material surrounding the stressor was considered either to be a uniform GaN matrix or GaN matrix with an (In,Ga)N quantum well which is grown pseudomorphically between the stressor and the free surface. Isotropic elasticity was used to find the strain field around the stressor. A k · p perturbation theory approach was then applied to examine the shifts of the conduction and valence band edges caused by the stressor. We find lateral confinement for electrons and holes, which can be utilized to realize a strain-induced quantum dot in the quantum well.


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