Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes

Yang, Q. K.; Fuchs, F.; Schmitz, J.; Pletschen, W.
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4757
Academic Journal
Trap centers with an energy level positioned 1/3 of the band gap below the effective conduction band edge are observed in the electroluminescence spectra of InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 11 µm. The trap centers are recognized by simulating the low-temperature current-voltage characteristics of the diodes. Excellent quantitative agreement on both, the I-V characteristic and the differential resistance between the experimental data and the theoretical prediction is achieved. The quantitative simulation of the I-V characteristics shows, that the 77 K performance of InAs/(GaIn)Sb photodiodes is dominated by generation-recombination processes even at long wavelengths. Above 50 K, tunneling currents are not of importance.


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