Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Peng, Du Zen; Chang, Ting-Chang; Shih, Po-Sheng; Zan, Hsiao-Wen; Huang, Tiao-Yuan; Chang, Chun-Yen; Liu, Po-Tsun
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4763
Academic Journal
We have fabricated a polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/ drain (SiGe-RSD TFT). The SiGe-RSD regions were grown selectively by ultrahigh vacuum chemical vapor deposition at 550 °C. It was observed that, with SiH[sub 4] and GeH[sub 4] gas flow rates of 5 and 2 sccm, respectively, the poly-SiGe could be selectively grown up to 100 nm for source/drain regions. The resultant transistor structure features an ultrathin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), which is ideally suited for optimum performance. The significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current, and higher drain breakdown voltage have been observed in the SiGe-RSD TFT, compared to the conventional TFT counterpart. These results indicate that TFTs with SiGe raised source/drain structure would be highly promising for ultrathin TFTs applications.


Related Articles

  • Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors. Dimitriadis[a], C. A.; Farmakis, F. V.; Brini, J.; Kamarinos, G. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2648 

    Studies the influence of the material quality and thickness on the leakage current of polycrystalline silicon thin-film transistors. Reduction of the leakage current at low electric fields in the drain region with the improvement of the polycrystalline silicon layer; Independence of the leakage...

  • Device application and structure observation for hemispherical-grained Si. Watanabe, Hirohito; Aoto, Nahomi; Adachi, Saburo; Kikkawa, Takamaro // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3538 

    Provides information on a study that discussed the structure and the formation process of polycrystalline-silicon films which have hemispherical grains on the surfaces. Experimental procedure; Results and discussion on the study; Conclusion.

  • Optical absorption and Hall effect in (220) and (400) oriented polycrystalline silicon films. Kamiya, T.; Nakahata, K.; Sameshima, T.; Watanabe, T.; Mouri, T.; Shimizu, I. // Journal of Applied Physics;9/15/2000, Vol. 88 Issue 6, p3310 

    Investigates carrier transport properties for polycrystalline silicon films fabricated at 300 degrees Celsius by plasma enhanced chemical vapor deposition from gaseous mixture of SiF[sub 4] and hydrogen. Analysis of free carrier light absorption.

  • Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin... Dimitriadis, C.A.; Brini, J.; Kamarinos, G.; Gueorguiev, V. K.; Ivanov, Tz. E. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1469 

    Presents a study which examined the performance of high temperature processed polycrystalline silicon thin film transistors. Details on the experiments conducted; Results of the study; Discussion on the results.

  • Determination of generation lifetime in intrinsic polycrystalline silicon. Hurley, P. K.; Taylor, S.; Eccleston, W.; Meakin, D. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1525 

    A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the...

  • Photoluminescence from stain-etched polycrystalline Si thin films. Steckl, A.J.; Xu, J.; Mogul, H.C. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2111 

    Examines the photoluminescence of stain-etched polycrystalline Si thin films. Deposition of poly-Si thin films on oxidized Si and quartz substrates; Production of stain-etched doped and undoped poly-Si films; Acquisition of luminescent patterns with sub-micrometer dimensions.

  • Kink effect in short-channel polycrystalline silicon thin-film transistors. Valletta, A.; Gaucci, P.; Mariucci, L.; Fortunato, G.; Brotherton, S. D. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3113 

    Excess current, induced by impact ionization (kink effect) has been investigated in short-channel polysilicon thin-film transistors (TFTs). We have shown, both experimentally and by using two-dimensional (2-D) numerical simulations, that the output characteristics are substantially degraded by...

  • Annealing effects on the electrical properties and microscopic structure of semi-insulating polycrystalline silicon films. Cho, Wonju; Takeuchi, Yuji; Kuwano, Hiroshi // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p7916 

    Studies the dependence of the electrical properties and microscopic structure of semi-insulating polycrystalline silicon films. Experimental procedure; Results of the study; Conclusion.

  • High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Xiangfen Duan; Chunming Niu; Sahi, Vijendra; Jian Chen; Parce, J. Wallace; Empedocles, Stephen; Goldman, Jay L. // Nature;9/18/2003, Vol. 425 Issue 6955, p274 

    Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics