TITLE

Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

AUTHOR(S)
Donetsky, D.; Anikeev, S.; Belenky, G.; Luryi, S.; Wang, C. A.; Nichols, G.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4769
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers that are double capped with GaSb or AlGaAsSb layers were determined using time-resolved photoluminescence. It was found that accumulation of electrons at the p-doped GaInAsSb/GaSb type-II interface contributes significantly to the interfacial recombination velocity S, which was measured to be 3100 cm/s. The use of heavily p-doped GaSb cap layers was proposed to eliminate the potential well of electrons and barrier for holes at the interface. Increasing the GaSb cap doping level from 1 × 10[sup 16] to 2 × 10[sup 18] cm[sup -3] resulted in a 2.7 times reduction of S down to 1140 cm/s. The smallest value of S was determined to be 720 cm/s, which was obtained for structures with AlGaAsSb cap layers that have no valence band offset.
ACCESSION #
8652446

 

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