Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(0338)

Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Shiomi, Hiromu
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4772
Academic Journal
The interface properties of SiO[sub 2]/4H-SiC(03&3macr;8) were characterized using n-type metaloxide-semiconductor structures fabricated by wet oxidation. The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements at a low temperature and room temperature. 4 H-SiC(03&3macr;8) was found to have different energy distribution of the interface state density from the (0001) face. The shallow interface state density on (03&3macr;8) is lower than on (0001) by a factor of 4 to 8.


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