Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

Ciuti, C.; McGuire, J. P.; Sham, L. J.
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4781
Academic Journal
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.


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