TITLE

Formation of the Z[sub 1,2] deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation

AUTHOR(S)
Pintilie, I.; Pintilie, L.; Irmscher, K.; Thomas, B.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4841
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
As-grown 4H-SiC epitaxial layers were investigated by deep-level transient spectroscopy to study the formation of the well-known Z[sub 1,2] defect with energy levels normally detected at about E[sub C] -0.7 eV. Chemical vapor deposition, applying various nitrogen-doping concentrations and C/Si ratios (1.2-3) in the gas phase, was used to prepare the samples. The Z[sub 1,2] defect concentration was observed to increase with the incorporated nitrogen concentration. The dependence was linear for medium C/Si ratios (1.5-2.5). The highest and lowest applied C/Si ratios (3 and 1.2) enhanced and suppressed the Z[sub 1,2] defect formation, respectively. This behavior tentatively suggests a complex of nitrogen with interstitial carbon atoms or, less probably, silicon vacancies. In particular, the correlation between the Z[sub 1,2] defect formation and the nitrogen incorporation was clearly shown in the present investigation, in contradiction to conclusions of other authors. Previously reported negative-U properties of the Z[sub 1,2] deep-level defects could be confirmed. A 1:1 relation between the concentrations of Z[sub 1] and Z[sub 2] was obtained for the present as-grown epitaxial layers.
ACCESSION #
8652421

 

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