Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)

Hunt, Michael R. C.; Montalti, Massimo; Chao, Yimin; Krishnamurthy, Satheesh; Dhanak, Vinod R.; Šiller, Lidija
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4847
Academic Journal
The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650±10 °C) substantially lower than the analogous reaction for adsorbed C[sub 60]. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced.


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