TITLE

Electrical and physical characteristics of PrTi[sub x]O[sub y] for metal-oxide-semiconductor gate dielectric applications

AUTHOR(S)
Jeon, Sanghun; Hwang, Hyunsang
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4856
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical and physical characteristics of PrTi[sub x]O[sub y], for use in metal-oxide-semiconductor gate dielectric applications were investigated. An amorphous layer of PrTi[sub x]O[sub y] with an equivalent oxide thickness of 1 nm and a dielectric constant of 23 was formed by means of e-beam evaporation. Compared to Pr[sub 2]O[sub 3], PrTi[sub x]O[sub y] was found to exhibit excellent characteristics such as a high accumulation capacitance, a low leakage current density, a thin interfacial layer, and a lower reactivity to water. The superiority of PrTi[sub x]O[sub y] can be attributed to the addition of TiO[sub 2] to the praseodymium oxide matrix.
ACCESSION #
8652416

 

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