A high-performance cryogenic amplifier based on a radio-frequency single electron transistor

Segall, K.; Lehnert, K. W.; Stevenson, T. R.; Schoelkopf, R. J.; Wahlgren, P.; Aassime, A.; Delsing, P.
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4859
Academic Journal
We demonstrate a high-performance cryogenic amplifier based on a radio-frequency single-electrontransistor (rf-SET). The high charge sensitivity and large bandwidth of the rf-SET, along with low power dissipation, low capacitance and on-chip integrability, make it a good candidate for a general-purpose cryogenic amplifier for high impedance sources. We measure a large-gate rf-SET with an open-loop voltage noise of 30 nV/√(Hz), among the lowest reported voltage noise figures for a SET. Using a closed-loop transimpedance configuration, the amplifier shows almost 2 orders of magnitude increase in dynamic range, a 3 dB bandwidth of 30 kHz, and a transimpedance gain of 50 V/µA for a cryogenic 1 MΩ load resistor. The performance of this amplifier is already sufficient for use as an integrated readout with some types of high-performance cryogenic detectors for astrophysics.


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