Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Zhang, S. K.; Wang, W. B.; Shtau, I.; Yun, F.; He, L.; Morkoç, H.; Zhou, X.; Tamargo, M.; Alfano, R. R.
December 2002
Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4862
Academic Journal
We report on a backilluminated GaN/Al[sub 0.18]Ga[sub 0.82]N heterojunction ultraviolet (UV) photodetector with high internal gain based on metal-semiconductor-metal structures. A narrow band pass spectral response between 365 and 343 nm was achieved. When operating in dc mode, the responsivity reaches up to the order of 10² A/W under weak UV illumination, which is due to enormous internal gain up to 10³. The linear dependence of photocurrent on bias and its square root dependence on optical power are found and explained by a trapping and recombination model. The high photocurrent gain is attributed to trapping and recombination centers with an acceptor character induced by dislocations in GaN.


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