TITLE

An ultra-thin buffer layer for Ge epitaxial layers on Si

AUTHOR(S)
Kawano, M.; Yamada, S.; Tanikawa, K.; Sawano, K.; Miyao, M.; Hamaya, K.
PUB. DATE
March 2013
SOURCE
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p121908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using an Fe3Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe3Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of ∼4% is completely relaxed in the Fe3Si layer. This means that the Fe3Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.
ACCESSION #
86446913

 

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