TITLE

InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

AUTHOR(S)
Gu, Y.; Zhang, Y. G.; Chen, X. Y.; Cao, Y. Y.; Fang, X.; Ding, G. Q.; Zhou, L.
PUB. DATE
March 2013
SOURCE
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p121110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work reports on InAs quantum wells (QWs) grown on GaAs-based metamorphic In0.83Al0.17As buffers for type-I mid-infrared (MIR) emission. X-ray diffraction and Raman measurements show that the GaAs-based quantum wells have similar lattice and strain conditions with the InP-based structure. Atomic force microscope shows the smoother surface of the structure on GaAs substrate. For the GaAs-based quantum wells, favorable photoluminescence emission at 2.9 μm at 300 K has been achieved, and the optical quality is comparable to the structure on InP substrate. It is promising to employ this metamorphic quantum well structure for the demonstration of GaAs-based antimony-free mid-infrared lasers.
ACCESSION #
86446912

 

Related Articles

  • Kinetic phase diagrams of GaN-based polariton lasers. Solnyshkov, D.; Ouerdane, H.; Malpuech, G. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p016101 

    The simulations of polariton relaxation and Bose condensation in GaN microcavities (both bulk and with quantum wells) are performed by solving semiclassical Boltzmann equations. A complete set of kinetic phase diagrams for the most important parameters is calculated. We show that such cavities...

  • On the importance of non-thermal far-field blooming in broad-area high-power laser diodes. Piprek, Joachim; Simon Li, Z. M. // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221110 

    High-power broad-area laser diodes often suffer from a widening of the slow-axis far-field with increasing current (lateral far-field blooming). This effect is commonly attributed to self-heating. Utilizing self-consistent electro-thermal-optical simulations, we analyze previous experimental...

  • Room temperature operation of InGaAs/InGaAsP/InP quantum dot lasers. Jang, J. W.; Pyun, S. H.; Lee, S. H.; Lee, I. C.; Jeong, Weon G.; Stevenson, R.; Dapkus, P. Daniel; Kim, N. J.; Hwang, M. S.; Lee, D. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3675 

    The growth conditions for InGaAs/InGaAsP/InP quantum dots (QDs) have been optimized and QDs of high luminescence efficiency and the room temperature operation of QD lasers emitting at ∼1.5 μm have been demonstrated. Lattice-matched InGaAsP (λg=1.0–1.1 μm) was used as a...

  • Electrically injected spin-polarized vertical-cavity surface-emitting lasers. Holub, M.; Shin, J.; Chakrabarti, S.; Bhattacharya, P. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p091108 

    We report the design, fabrication, and characterization of an electrically injected, spin-polarized, vertical-cavity surface-emitting laser. We have demonstrated spin injection from the ferromagnetic semiconductor (Ga,Mn)As into In0.2Ga0.8As/GaAs quantum wells, spin transport across a distance...

  • MBE growth of 5 μm quantum cascade lasers. Mamutin, V.; Ustinov, V.; Boetthcher, J.; Kuenzel, H. // Technical Physics Letters;May2010, Vol. 36 Issue 5, p408 

    We have demonstrated quantum cascade lasers (QCL) emitting at ∼5μm based on efficient injection of the four quantum wells active region design with vertical transitions and strain-compensated superlattice with high injection efficiency and short ground state lifetime. Using a processing...

  • Lasing from a circular Bragg nanocavity with an ultrasmall modal volume. Scheuer, Jacob; Green, William M. J.; DeRose, Guy A.; Yariv, Amnon // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p251101 

    We demonstrate single-mode lasing at telecommunication wavelengths from a circular nanocavity employing a radial Bragg reflector. Ultrasmall modal volumes and submilliwatt pump thresholds level are observed for lasers with InGaAsP quantum well active membrane. The electromagnetic field is shown...

  • InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth. Pei-Chin Chiu; Nien-Tze Yeh; Chao-Chi Hong; Tung Po Hsieh; Yao-Tsong Tsai; Wen-Jeng Ho; Jen-Inn Chyi // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p091115 

    The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al contamination by growth interruption and...

  • Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range. Bauer, A.; Langer, F.; Dallner, M.; Kamp, M.; Motyka, M.; Sęk, G.; Ryczko, K.; Misiewicz, J.; Höfling, S.; Forchel, A. // Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p251103 

    GaSb-based type-II quantum well (QW) structures and interband cascade lasers (ICLs) are investigated with regards to the dependence of emission wavelength on active QW thicknesses. Experimentally derived photoluminescence data and electrically driven ICL device data accompanied by theoretical...

  • Investigation of the concentration goodness for some liquid drugs using light angular scattering. Al-Muslet, Nafie A.; Yosif, Rasha I.; Ahmed, Mubarak M. // Indian Journal of Science & Technology;Jun2011, Vol. 4 Issue 6, p632 

    In this work a simple setup was built to measure the angular scattering of laser light as an approach for testing the quality of some pharmaceutical solutions (conc.) and detect any change in that concentration with respect to the standard one suitable for desired dose. A laser diode with...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics