The location and doping effect of boron in Si nanocrystals embedded silicon oxide film

Xie, Min; Li, Dongsheng; Chen, Le; Wang, Feng; Zhu, Xiaodong; Yang, Deren
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p123108
Academic Journal
Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. The observation of x-ray photoelectron spectroscopy of Si 2p and B 1s and the decrease in lattice spacing of Si (111) plane suggest that B atoms are doped into Si-NCs. The activated doping is confirmed by the Fano effect of the micro-Raman spectra for Si-NCs and the drastic decrease of the sheet resistance.


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