Ultra-shallow junctions formed using microwave annealing

Xu, Peng; Fu, Chaochao; Hu, Cheng; Wei Zhang, David; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Zhi-Bin; Zhang, Shi-Li
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122114
Academic Journal
Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 °C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 °C.


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